Intelligent digital redesign for nonlinear systems using a guaranteed cost control method

In this paper, a novel intelligent digital redesign (IDR) technique using the guaranteed cost control method is proposed for nonlinear systems which can be represented by a Takagi-Sugeno (T-S) fuzzy model. The IDR technique, which is one of the sampled-data fuzzy controller design methods, guarantees not only the stability condition of the sampled-data closed-loop system with the sampleddata fuzzy controller and the state-matching error is presented. By using the concept of the guaranteed cost control method, sufficient conditions are obtained for both minimization of the state-matching error and stabilization of the sampled-data closed-loop system and derived in terms of linear matrix inequalities (LMIs). Finally, a numerical example is provided to verify the effectiveness of the proposed technique.     

Long-wave interfacial instabilities in a thin electrolyte film undergoing coupled electrokinetic flows: a nonlinear analysis

Spatiotemporal deformations of the free charged surface of a thin electrolyte film undergoing a coupled electrokinetic flow composed of an electroosmotic flow (EOF) on a charged solid substrate and an electrophoretic flow (EPF) at its free surface are explored through linear stability analysis and the long-wave nonlinear simulations. The nonlinear evolution equation for the deforming surface is derived by considering both the Maxwell’s stresses and the hydrodynamic stresses. The electric potential across the film is obtained from the Poisson–Boltzmann equation under the Debye–Hückel approximation. The simulations show that at the charged electrolyte–air interface, the applied electric field generates an EPF similar to that of a large charged particle. The EOF near the solid–electrolyte interface and the EPF at the electrolyte–air interface are in the same (or opposite) directions when the zeta potentials at the two interfaces are of the opposite (or same) signs. The linear and nonlinear analyses of the evolution equation predict the presence of travelling waves, which is strongly modulated by the applied electric field and the magnitude/sign of the interface zeta potentials. The time and length scales of the unstable modes reduce as the sign of zeta potential at the two interfaces is varied from being opposite to same and also with the increasing applied electric field. The increased destabilization is caused by a reverse EPF near the free surface when the interfaces bear the same sign of zeta potentials. Flow reversal by EPF at the free surface occurs at smaller zeta potential of the free surface when the film is thicker because of less influence of the EOF arising at the solid–electrolyte boundary. The amplitude of the surface waves is found to be smaller when the unstable waves travel at a faster speed. The films can undergo pseudo-dewetting when the free surface is almost stationary under the combined influences of EPF and EOF. The free surface instability of the coupled EOF and EPF has some interesting implications in the development of micro/nano fluidic devices involving a free surface.     

Effects of wheelchair-based rehabilitation on the physical functions and health perception of stroke patients

The purpose of this study was to investigate the effect of wheelchair-based rehabilitation on the physical functions, health perception, and blood lipids according to the length of time since the stroke. Wheelchair-based rehabilitation progressed for 60 min per session, five times per week for 6 weeks. Physical functions, health perception (SF-36), and blood lipids were measured before and after rehabilitation. Physical fitness for physical function such as agility, grip strength, lower-body muscular endurance, flexibility, and posture control significantly improved after 6 weeks of rehabilitation. Health perception improved significantly with physical and mental health according to time since the stroke occurred. Overall, 6 weeks of wheelchair-based rehabilitation had a positive effect on the physical function and health perception regardless of stroke duration. Wheelchair-based rehabilitation had a more positive effect on the physical functions and health perception on the patients who suffered their stroke most recently. We suggested that wheelchair-based rehabilitation is necessary even through wheelchair based for chronic stroke patients, and it was useful their improved of quality of life.     

Pharmacophore and docking-based combined in-silico study of KDR inhibitors

The growth and metastasis of solid tumors is dependent on angiogenesis. The vascular endothelial growth factor (VEGF) and its cell surface receptor in human KDR (kinase domain containing receptor or VEGFR-2) have particular interest because of their importance in angiogenesis. The development of novel inhibitors of VEGFR-2 would be helpful to check the growth of tumors. Quantitative structure activity relationship (QSAR) analyses used to understand the structural factors affecting inhibitory potency of thiazole-substituted pyrazolone derivatives. Several pharmacophore-based models indicated the importance of steric, hydrophobic and hydrogen bond acceptor groups to inhibitory activity. The comparative molecular field analyses (CoMFA) and comparative molecular similarity indices analyses (CoMSIA) based 3D-QSAR models were derived using pharmacophore-based alignment. Both CoMFA (q² = 0.70, r² = 0.97 and ) and CoMSIA (q² = 0.54, r² = 0.82 and ) gave reasonable results. The molecular docking (receptor-guided technique) with a recently reported receptor structure (PDB = 1YWN) were performed. The docked alignment was subsequently used for 3D-QSAR (CoMFA; q² = 0.56, r² = 0.97, , CoMSIA; q² = 0.58 r² = 0.91, ). The overall both studies were indicated, steric, electrostatic and hydrogen bond acceptor effects contribute to the inhibitory activity. CoMFA and CoMSIA models suggested that a positive bulk with hydrophobic effect is desirable around position 4 and 5 and hydrogen bond acceptor groups around pyrazolones ring will be helpful.     

DEVS-Based modeling of VoIP spam callers’ behavior for SPIT level calculation

At the present time the VoIP (Voice over Internet Protocol) service is generally accepted as an alternative for people seeking cheaper means to make a phone call. Users of VoIP service may fall anywhere along a spectrum between types at two extremes: one of which is an ordinary caller who doesn’t use the telephone for commercial purposes, while the other is a person who generates spam calls for commercial purposes. The focus of this paper concerns modeling of spam callers’ behavior to calculate the SPIT (Spam over Internet Telephony) level for management of the quality of service. From the perspective of a VoIP service provider’s view, spam callers are also a type of customer and sometimes they are valuable for increasing revenue. However, if a service provider does not manage spam calls, it can harm their business, because ordinary users might not receive phone calls using the phone numbers of the VoIP service. Thus, there is a trade-off between revenues and usability in managing spam calls in the VoIP service. This work presents a model of spam caller’s behavior using the DEVS (Discrete Event System Specification) formalism. The DEVS formalism is applicable as a model of behavior, by defining the state and state transition of the target of the model. In our model, we use six main parameters to define the states and state transitions. Each state is represented by a number which indicates the SPIT level of a caller. If the value is 1.0 then the caller is more similar to a spam caller. Based on the model definition, we constructed a SPIT level Calculation UI (User Interface) that is used to manage spam calls to improve VoIP service quality.     

Proteomic analysis of sera of asymptomatic,early‐stage patients with Wilson's disease

Wilson's disease (WD) is characterized by excessive accumulation of intracellular copper in liver and extrahepatic tissues, leading to significant oxidative stress and tissue damage. To date, several diagnostic biomarkers for WD such as serum ceruloplasmin, serum or urine copper levels and copper content in liver have been identified. However, these biomarkers may not be convincing for the diagnosis in some WD patients. To identify additional novel diagnostic biomarkers, we compared the serum protein profiles of asymptomatic childhood WD patients (n=20), without neurologic manifestation or liver cirrhosis, with normal controls (n=13). Fourteen spots, five up‐regulated and nine down‐regulated (>2‐fold), were differentially expressed in WD patients in comparison to normal control on 2‐DE. Among them, three spots were down‐regulated in both male and female WD. MS/MS analysis revealed that the three spots were complement component C3, complement factor B and alpha‐2 macroglobulin. By comparative proteome analysis, complement component C3, complement factor B and alpha‐2 macroglobulin, which are related to oxidative stress and inflammation, turned out to be good candidates for novel diagnostic biomarkers for early stages of WD.     

手性指数的研究及其应用

该工作对手性化合物的构效关系进行了研究,其内容包括:(1)对二维拓扑指数Ami进行了扩展,即在指数的衍生中加入手性碳原子的因素,使之成功地应用于14个手性化合物活性的预测;(2)描述了构象独立的手性指数(CICC法)和构象依赖的手性指数(CDCC法),采用CDCC和CICC预测了80个二级醇的1H NMR化学位移差的符号,并由此可以确定该类化合物的绝对构型;(3)描述了原子构象依赖的手性指数(aCDCC),并将这种方法用于手性仲醇的α-碳原子的13C NMR在不同手性溶剂中的化学位移差的预测,获得了满意的结果.     

Cactus‐Like Hollow Cu2‐xS@Ru Nanoplates as Excellent and Robust Electrocatalysts for the Alkaline Hydrogen Evolution Reaction

The development of Pt‐free electrocatalysts for the hydrogen evolution reaction (HER) recently is a focus of great interest. While several strategies are developed to control the structural properties of non‐Pt catalysts and boost their electrocatalytic activities for the HER, the generation of highly reactive defects or interfaces by combining a metal with other metals, or with metal oxides/sulfides, can lead to notably enhanced catalytic performance. Herein, the preparation of cactus‐like hollow Cu_2‐x S@Ru nanoplates (NPs) that contain metal/metal sulfide heterojunctions and show excellent catalytic activity and durability for the HER in alkaline media is reported. The initial formation of Ru islands on presynthesized Cu_1.94S NPs, via cation exchange between three Cu⁺ ions and one Ru³⁺, induces the growth of the Ru phase, which is concomitant with the dissolution of the Cu_1.94S nanotemplate, culminating in the formation of a hollow nanostructure with numerous thin Ru pillars. Hollow Cu_2‐x S@Ru NPs exhibit a small overpotential of 82 mV at a current density of ?10 mA cm^?2 and a low Tafel slope of 48 mV dec^?1 under alkaline conditions; this catalyst is among state‐of‐the‐art HER electrocatalysts in alkaline media. The excellent performance of hollow Cu_2‐x S@Ru NPs originates from the facile dissociation of water in the Volmer step.     

A Novel and Facile Route to Synthesize Atomic‐Layered MoS2 Film for Large‐Area Electronics

High‐quality and large‐area molybdenum disulfide (MoS₂) thin film is highly desirable for applications in large‐area electronics. However, there remains a challenge in attaining MoS₂ film of reasonable crystallinity due to the absence of appropriate choice and control of precursors, as well as choice of suitable growth substrates. Herein, a novel and facile route is reported for synthesizing few‐layered MoS₂ film with new precursors via chemical vapor deposition. Prior to growth, an aqueous solution of sodium molybdate as the molybdenum precursor is spun onto the growth substrate and dimethyl disulfide as the liquid sulfur precursor is supplied with a bubbling system during growth. To supplement the limiting effect of Mo (sodium molybdate), a supplementary Mo is supplied by dissolving molybdenum hexacarbonyl (Mo(CO)₆) in the liquid sulfur precursor delivered by the bubbler. By precisely controlling the amounts of precursors and hydrogen flow, full coverage of MoS₂ film is readily achievable in 20 min. Large‐area MoS₂ field effect transistors (FETs) fabricated with a conventional photolithography have a carrier mobility as high as 18.9 cm² V^?1 s^?1, which is the highest reported for bottom‐gated MoS₂‐FETs fabricated via photolithography with an on/off ratio of ≈10⁵ at room temperature.